Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响 |
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| 甄龙云, 彭鹏, 仇成功, 郑蓓蓉, Armaou Antonios, 钟蓉 | ||||||||||||||||||
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Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition |
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| ZHEN Longyun, PENG Peng, QIU Chenggong, ZHENG Beirong, ARMAOU Antonios, ZHONG Rong | ||||||||||||||||||
| 表2 生长AlN缓冲层时气相-表面的化学反应 |
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| Table 2 Gas-surface reactions during the growth of AlN buffer layer |
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