Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响

甄龙云, 彭鹏, 仇成功, 郑蓓蓉, Armaou Antonios, 钟蓉

Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition

ZHEN Longyun, PENG Peng, QIU Chenggong, ZHENG Beirong, ARMAOU Antonios, ZHONG Rong

表1 不预沉积Al层时气相-表面的化学反应

Table 1 Gas-surface reactions during Al pre-deposition

Type & No. Reaction G1 AlCH332→2AlCH33 G2 AlCH33→AlCH32+CH3 G3 AlCH32→AlCH3+CH3 S1 AlCH33+S→AlS+3CH3 S2 AlCH32+S→AlS+2CH3 S3 AlCH3+S→AlS+CH3