Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响
甄龙云1, 彭鹏2, 仇成功1, 郑蓓蓉1, Armaou Antonios1,3, 钟蓉1(
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Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition
ZHEN Longyun1, PENG Peng2, QIU Chenggong1, ZHENG Beirong1, ARMAOU Antonios1,3, ZHONG Rong1()
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图5. 采用不同TMAl流量预沉积Al层时相应GaN (0002)面的XRD摇摆曲线的强度及其半高宽
Fig.5. GaN films corresponding to different TMAl flow is characterized by XRD: (a) the rocking curves measured between the GaN (0002) planes, (b) the FWHM of the rocking curves
