Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响
甄龙云1, 彭鹏2, 仇成功1, 郑蓓蓉1, Armaou Antonios1,3, 钟蓉1(
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Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition
ZHEN Longyun1, PENG Peng2, QIU Chenggong1, ZHENG Beirong1, ARMAOU Antonios1,3, ZHONG Rong1()
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图3. TMAl流量不同的预沉积Al层，相应AlN (002)面的XRD摇摆曲线的强度及其半高宽
Fig.3. AlN buffer layers corresponding to different TMAl flow characterized by XRD (a) the rocking curves measured between the AlN (002) planes, (b) the FWHM of the rocking curves
