Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响
甄龙云1, 彭鹏2, 仇成功1, 郑蓓蓉1, Armaou Antonios1,3, 钟蓉1(
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Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition
ZHEN Longyun1, PENG Peng2, QIU Chenggong1, ZHENG Beirong1, ARMAOU Antonios1,3, ZHONG Rong1()
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图2. TMAl流量不同的AlN薄膜的均方根粗糙度RRMS
Fig.2. Root-mean-square of surface roughness (RRMS) of AlN buffer layers corresponding to different TMAl flow characterized by AFM directly
