Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响
甄龙云1, 彭鹏2, 仇成功1, 郑蓓蓉1, Armaou Antonios1,3, 钟蓉1(
)
)
Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition
ZHEN Longyun1, PENG Peng2, QIU Chenggong1, ZHENG Beirong1, ARMAOU Antonios1,3, ZHONG Rong1()
)
图1. TMAl流量分别为 0 sccm、41.5 sccm、59.5 sccm和77.5 sccm预沉积Al层后在Si衬底上生长的AlN薄膜的AFM照片
Fig.1. AFM images of AlN buffer layers grown on the Si wafer after it has been pre-deposited of Al layer with TMAl flow of (a) 0 sccm, (b) 41.5 sccm, (c) 59.5 sccm, and (d) 77.5 sccm
