电化学刻蚀参数对高阻厚壁宏孔硅阵列表面形貌的影响
安欢,伍建春,张仲,王欢,孙华,展长勇,邹宇

Effect of Electrochemical Etching Parameters on Surface Morphology of Thick-walled Macroporous Silicon Array
Huan AN,Jianchun WU,Zhong ZHANG,Huan WANG,Hua SUN,Changyong ZHAN,Yu ZOU
表1 在电化学刻蚀参数不同的情况下制备的宏孔硅阵列的孔壁厚度
Table 1 Wall thickness of macroporous silicon array etched at different electrochemical etching parameters
Electrochemical etching parameters

Lamp voltages in HF/H2O/Ethanol

/V

CTAC contents

/g

Applied voltages in HF/H2O

/V

Applied voltages in

HF/H2O/Ethanol

/V

01402350.070.11.852.41.21.52
Pore wall thickness/μm2235272314384217.21313.3