电化学刻蚀参数对高阻厚壁宏孔硅阵列表面形貌的影响
安欢1,伍建春1,张仲1,王欢1,孙华2,展长勇1(
),邹宇1()
),邹宇1()
Effect of Electrochemical Etching Parameters on Surface Morphology of Thick-walled Macroporous Silicon Array
Huan AN1,Jianchun WU1,Zhong ZHANG1,Huan WANG1,Hua SUN2,Changyong ZHAN1(),Yu ZOU1()
),Yu ZOU1()
图5. 在电压不同的条件下制备的宏孔硅阵列的表面和断面形貌
Fig.5. Surface and cross-sectional SEM images of the macroporous silicon array etched at different applied voltages (a), (b) 1.2 V; (c), (d) 1.5 V; (e), (f) 2 V
