电化学刻蚀参数对高阻厚壁宏孔硅阵列表面形貌的影响
安欢1,伍建春1,张仲1,王欢1,孙华2,展长勇1(
),邹宇1()
),邹宇1()
Effect of Electrochemical Etching Parameters on Surface Morphology of Thick-walled Macroporous Silicon Array
Huan AN1,Jianchun WU1,Zhong ZHANG1,Huan WANG1,Hua SUN2,Changyong ZHAN1(),Yu ZOU1()
),Yu ZOU1()
图4. 在溶液中CTAC含量不同的条件下制备的宏孔硅阵列的表面和断面形貌
Fig.4. Surface and cross-sectional SEM images of the macroporous silicon array etched in solutions with different CTAC contents (a), (c) 0.07 g; (b), (d) 0.1 g
