电化学刻蚀参数对高阻厚壁宏孔硅阵列表面形貌的影响
安欢1,伍建春1,张仲1,王欢1,孙华2,展长勇1(
),邹宇1()
),邹宇1()
Effect of Electrochemical Etching Parameters on Surface Morphology of Thick-walled Macroporous Silicon Array
Huan AN1,Jianchun WU1,Zhong ZHANG1,Huan WANG1,Hua SUN2,Changyong ZHAN1(),Yu ZOU1()
),Yu ZOU1()
图2. COMSOL模拟的应用电场等势面的侧视图、截面图和顶部视图
Fig.2. Side view (a), cross-sectional (b), and top view (c-f) of the isosurfaces of the applied electric field simulated by COMSOL: (c) 0-0.2 V/μm; (d) 0.2-0.4 V/μm; (e) 0.4-0.8 V/μm; (f) 0.8-4 V/μm. The directions shown in the pictures in the paper are the crystal orientation of silicon, the crystal orientation is not discriminated during the simulation
