TaN薄膜的等离子体增强原子层沉积及其抗Cu扩散性能
王永平,丁子君,朱宝,刘文军,丁士进
Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
Yongping WANG,Zijun DING,Bao ZHU,Wenjun LIU,Shijin DING
表2
Ar
+
原位刻蚀9 min的不同TaN薄膜的原子分数
Substrate
temperature
N 1s/%
Ta 4f/%
O 1s/%
C 1s/%
250℃
41
46
7
6
275℃
40
47
8
5
300℃
37
52
8
3
325℃
35
55
8
2