TaN薄膜的等离子体增强原子层沉积及其抗Cu扩散性能

王永平,丁子君,朱宝,刘文军,丁士进

Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion

Yongping WANG,Zijun DING,Bao ZHU,Wenjun LIU,Shijin DING

表1 在250℃沉积的TaN薄膜的元素原子分数随原位Ar+刻蚀时间的变化

Table1 Evolution of the elemental atomic fraction of the TaN film as a function of Ar ion etching time

Etching time N 1s/% Ta 4f/% O 1s/% C 1s/% 0 min 19 18 21 42 3 min 39 40 11 10 6 min 41 45 8 6 9 min 41 46 7 6