TaN薄膜的等离子体增强原子层沉积及其抗Cu扩散性能
王永平,丁子君,朱宝,刘文军,丁士进(
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Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
Yongping WANG,Zijun DING,Bao ZHU,Wenjun LIU,Shijin DING()
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图8. 在不同温度退火后MOS器件的击穿场强分布和代表性I-V曲线
Fig.8. Breakdown filed and the representative I-V curves of the as-fabricated and post annealed MOS devices
