TaN薄膜的等离子体增强原子层沉积及其抗Cu扩散性能
王永平,丁子君,朱宝,刘文军,丁士进(
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Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
Yongping WANG,Zijun DING,Bao ZHU,Wenjun LIU,Shijin DING()
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图7. 未退火和在400℃退火的TaN薄膜的电阻率和密度
Fig.7. Resistivity and density of the as-deposited film (a) and the film annealed at 400℃ (b)
