TaN薄膜的等离子体增强原子层沉积及其抗Cu扩散性能
|
Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
|
图2. 生长速率与NH3脉冲时间和NH3流量的关系 |
Fig.2. Dependence of the growth rate of the TaN film on the NH3 plasma pulse time and the NH3 flow rate, respectively |
![]() |