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材料研究学报  2017, Vol. 31 Issue (6): 472-480    DOI: 10.11901/1005.3093.2016.553
  本期目录 | 过刊浏览 |
玻璃粉对铜导体浆料烧结膜性能的影响
马小强1,朱晓云1(),龙晋明2,曹梅3
1 昆明理工大学材料科学与工程学院 昆明 650093
2 昆明贵信凯科技有限公司 昆明 650093
3 昆明理工大学理学院 昆明 650093
Effect of Glass Powder on Performance of Copper Conductor Film Prepared via Sintering Cu-glass Paste
Xiaoqiang MA1,Xiaoyun ZHU1(),Jinming LONG2,Mei CAO3
1 School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
2 Kunming Guixinkai Science and Technology Ltd, Kunming 650093, China
3 School of Science, Kunming University of Science and Technology, Kunming 650093, China
引用本文:

马小强,朱晓云,龙晋明,曹梅. 玻璃粉对铜导体浆料烧结膜性能的影响[J]. 材料研究学报, 2017, 31(6): 472-480.
Xiaoqiang MA, Xiaoyun ZHU, Jinming LONG, Mei CAO. Effect of Glass Powder on Performance of Copper Conductor Film Prepared via Sintering Cu-glass Paste[J]. Chinese Journal of Materials Research, 2017, 31(6): 472-480.

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摘要: 

使用不同组成和含量的玻璃粉配制铜浆,将其印在Al2O3基片表面并在850℃烧结后得到铜膜,研究玻璃粉对铜膜的导电性和附着力等性能的影响。用四探针法测定铜膜方阻,使用拉力试验机测定铜膜附着力。用金相显微镜、X射线衍射仪(XRD)、扫描电子显微镜(SEM)以及热重分析仪(TGA)等手段对铜膜的显微组织、物相、形貌以及玻璃粉物理化学性质进行了表征。结果表明,组成为SiO2-B2O3-ZnO的G3玻璃粉的玻璃性能良好且其转变温度合适,制备出的铜膜试样表面平整,微观组织致密,导电性好。当G3玻璃粉含量(质量分数)为4.8%时铜膜的方阻为9.5 mΩ/□, 与Al2O3基体间的附着力为24 N/mm2。为了验证铜膜在使用过程中的可靠性,测试了G3-3铜膜的抗氧化和老化性能。结果表明,G3-3铜膜在室温氧化28 d后平均增重率为3.5%,电阻变化率的平均值为0.79%;在20℃~160℃高温老化后铜膜的电阻变化率平均值为12.63%、平均增重率为4.63%,具有良好的抗氧化性和抗老化性能。

关键词 复合材料玻璃粉铜膜方阻附着力可靠性    
Abstract

Copper pastes with different glass powders were prepared and then printed on Al2O3 substrate and finally sintered at 850℃ to produce Cu film on the Al2O3 substrate surface. The produced Cu-films and glass powder were characterized by means of metallographic microscope, X-ray diffractometer, scanning electron microscope and thermo gravimetric analyzer. While the effect glass powder on the conductivity and adhesive performance of Cu films was also assessed. The results show that glass powder G3 composited of SiO2-B2O3-ZnO possesses appropriate transition temperature, with which a compact copper film with flat surface and good electrical conductivity can easy be made. When the Cu-paste with 4.8 mass% of glass powder G3, the produced Cu-film presents electrical resistance of 9.5 mΩ/□ and adhesive strength of 24 N/mm2 to the Al2O3 substrate. In order to verify the reliability of Cu-film in service, the oxidation resistance and aging properties of Cu-film G3-3 were examined. It was found that the average mass gain rate of the Cu-film was 3.5% after 28 days oxidation at room temperature, the resistance change average rate was 0.79%. After aging test at 20~160oC for 12 h, the average change rate of the Cu-film resistance was 12.63% and the average mass gain rate was 4.63%, which demonstrated that film has the good oxidation resistance and anti-aging performance.

Key wordscomposite    glass powder    copper film    sheet resistance    adhesion    reliability
收稿日期: 2016-09-22     
基金资助:国家科技型中小企业创新资金(14C26215303257),昆明市科技计划重点项目(2015-2-G-01945),昆明理工大学人才培养基金(kk23201351006)
Purity
/%
Appearance Particle size /μm Specific surface area /m2g-1 Loose density /gcm-3
≥99.5 spherical 1.5 1.6 3.0
表1  铜粉的性能指标
Glass powder Appearance Main composition Glass transition temperature /℃
G1 White powder SiO2-B2O3-CaO 600
G2 White powder SiO2-B2O3-Sb2O3 700
G3 White powder SiO2-B2O3-ZnO 800
G4 White powder SiO2-B2O3-TiO2 900
表2  玻璃粉的性能指标
Material Ethylcellulose Tributyl citrate Butyl carbitol Terpineol Other additives Total amount/g
Mass fraction/% 8 12 21 57 2 1.0
表3  有机载体的配方
Ingredient G1-1 G1-2 G1-3 G2-1 G2-2 G2-3 G3-1 G3-2 G3-3 G4-1 G4-2 G4-3
Copper powder 73.6 73.6 73.6 73.6 73.6 73.6 73.6 73.6 73.6 73.6 73.6 73.6
Glass powder 1.6 3.2 4.8 1.6 3.2 4.8 1.6 3.2 4.8 1.6 3.2 4.8
Bismuth oxide 4.8 3.2 1.6 4.8 3.2 1.6 4.8 3.2 1.6 4.8 3.2 1.6
Organic carrier 20 20 20 20 20 20 20 20 20 20 20 20
表4  铜浆的配方(质量分数,%)
图1  850℃氮气中的烧结曲线
图2  烧结铜膜试样
图3  玻璃粉G1~G4 的XRD衍射图
图4  铜模试样G1~G4的典型XRD衍射图
图5  玻璃粉G1与G3 的TG和DTG曲线图
图6  铜膜试样的金相显微照片
图7  铜膜试样的表面SEM照片
图8  铜膜试样截面的SEM照片
图9  铜膜试样的方阻
图10  铜膜试样的附着力
图11  后期烧结的铜膜试样
  
Copper film
samples
Starting
resistors/mΩ
Resistance after
28 d/mΩ
Resistance
change rate/%
a 112.57 113.48 0.81
b 112.72 113.60 0.78
c 112.78 113.65 0.77
表5  室温环境下铜膜试样导电性变化情况
Copper film
samples
Quality at
20℃/mg
Quality at
160℃/mg
Oxidation weight gain rate/%
d 94.7 99.2 4.75
e 95.2 99.5 4.52
f 95.4 99.8 4.61
表6  高温老化试验前后铜膜试样氧化增重情况
图13  高温老化对铜膜试样导电性的影响
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